| PART |
Description |
Maker |
| 28F008C3 GT28F160C3B110 GT28F016C3B90 TE28F008C3T1 |
3 VOLT ADVANCED BOOT BLOCK 8- / 16- / 32-MBIT FLASH MEMORY FAMILY
STANDOFF HEX 6-32THR 2.5L ALUM
TVS, 6.5CA, BI, 6.5V, 400W, SMT
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 16 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 2 - Mbit闪存家庭
TVS UNIDIRECT 7.5V 400W SMA
|
Intel Corp.
Intel, Corp.
|
| 23L1610-12 |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
|
Macronix International Co., Ltd.
|
| MX23C1610 MX23C1610YC-15 23C1610-10 23C1610-12 23C |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
|
MCNIX[Macronix International]
|
| V58C2256 V58C2256164S V58C2256404S V58C2256804S |
HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| EN29PL032A-70TIP |
32 Mbit (2 M x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory
|
Eon Silicon Solution Inc.
|
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| S25FL064K |
64-Mbit CMOS 3.0 Volt Flash Memory with 80-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
| AM42DL640AG85IS AM42DL640AG AM42DL640AG25IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
|
SPANSION
Advanced Micro Devices
|
